An Area Efficient Inductorless Wideband Low-Noise Amplifier

This work presents a wideband inductor-less Low Noise Amplifier (LNA) for the front-end RF receiver with post-layout simulation results. The proposed LNA is designed and simulated using UMC 180 nm CMOS technology operating at a voltage of 1.8V. The characteristics of the proposed LNA are high gain, low noise figure, good input impedance matching, high bandwidth, good linearity, considerably low power dissipation. The LNA circuit is designed for the range of frequency from 0.8 GHz–2.6 GHz. The proposed LNA comprises of a common gate stage, a complementary common source stage and an adder for noise cancellation. The input return loss (S11) achieved is −8.8dB, gain of approximately 9.3 dB, linearity of −9.4 dBm and noise figure of 3.9 dB.