A Wideband Low RMS Phase/Gain Error mm-Wave Phase Shifter in 22-nm CMOS FDSOI

A 5-bit low-power and compact active mm-wave phase shifter (PS) with low rms phase/gain error is implemented in 22-nm CMOS fully depleted silicon on insulator (FDSOI) technology for 5G multi-input multi-output (MIMO) phased arrays. The proposed phase shifter uses a gain-boosted two-stage
$RC$
poly-phase filter (PPF), which maintains reasonable phase accuracy features while compensating for the gain response. The system uses a reactance invariant cascode vector modulator (VM), which results in constant loading effect for quadrature network, therefore improving rms phase/gain error. The phase shifter shows measured rms phase error of
$< 4^{\circ }$
at 24–36 GHz. The measured mean gain is from −8.2 to −5 dB at 24–36 GHz, and the rms gain error is < 0.6 dB at 24–36 GHz. The total power consumption of the proposed phase shifter is 7.2 mW, and the chip area is
$612\times 953\,\,\mu \text{m}$
including pads.