Study on the characteristics and application of voltage-controlled inverse memristor

In this paper, two active device-based voltage-controlled reverse memristor emulators are proposed to study their inverse-memristor behavior. The first inverse memristor model has a small number of components, and it will appear obvious inverse memristor pinched hysteresis loop (PHLs) when faced with different forms of periodic stimulus. Another model has state transitions between memristor and reverse memristor with frequency changes. Based on the advantages of the memristor characteristic conversion of the second simulator, an improved third-order bandpass filter is designed by replacing the linear resistance with the second reversible memristor emulator. The new memory filter not only has a simple structure; but also can produce rich dynamic behaviors such as chaotic attractor coexistence and periodic coexistence under certain circuit parameters.