Extraction of Emitter Series Resistance Along With Collector and Thermal Resistances in Silicon Bipolar Transistors

In this paper, we propose an extraction method for emitter series resistance (R
E
) following a reliable extraction of thermal resistance (R
TH
) and collector series resistance (R
Cx
) in silicon germanium heterojunction bipolar transistors. While the effect of self-heating non-negligibly influences the extracted R
E
value, our proposed method of R
Cx
extraction in the inverse active region of operation ensures a self-heating independent value. The proposed method is applied on the SPICE generated synthetic data in order to be able to directly verify the accuracy of the extracted parameters. It is observed that the proposed method yields an excellent accuracy in the extracted parameters.