Performance Improvement and Layout Design Comparison of AlGaN/GaN HEMT for Ka- Q- and V-band Applications

In this paper, we report on AlGaN/GaN HEMT device for Ka-band and Q/V-band applications. The designs of gate electrode are based on 0.12 μm gate length technology (NP12). Performance of the GaN HEMT device by outside source substrate via (OSV) design changed. It experimentally showed that the source inductance of the device influences its f
max
characteristic. Using 4x50 μm device, the f
max
of 212 GHz, small signal gain of 16dB and 11dB were measured at 30 GHz and 50 GHz, the saturation power density of 4.9 W/mm and maximum power-added efficiency (PAE) of 55% were achieved at 29GHz.