Wake-Up and Endurance Characteristics in Hf0.5Zr0.5O2-Based Metal-Ferroelectric-Metal Capacitor Depending on the Crystal Orientation of the TiN Bottom Electrodes

The ferroelectric properties of Hf0.5Zr0.5O2(HZO) according to the preferred orientations of the titanium nitride (TiN) bottom electrode (BE) were investigated. The (111) and (200)-oriented TiN were used as BEs. The difference in crystallinity of HZO was observed and the following electrical properties were compared. By employing the various crystal structure analyses and electrical measurements, it was found that the HZO thin film grown on TiN(200) forms more ferroelectric non-centrosymmetric orthorhombic phase in the pristine state due to the local epitaxial relation between TiN(200) and HZO.