Simulation of Built-In Test Equipments based on Avalanche Noise Diodes: Ka-band LNA Case Study

Integrated noise sources are fundamental for precise gain and noise figure measurements in Built-In Test Equipments. In this paper a custom-developed, avalanche noise diode model is used in a commercial CAD software and applied to the input of a Ka-band Low Noise Amplifier for Built-In Self-Test purposes. Few noise diodes have been characterized in recent years, and among those whose models are available in the literature, the 20$\mu m^{2}$ p-i-n diode developed with commercial 130-nm SiGe BiCMOS technology is considered. The diode is connected with an LNA realized in 130-nm SiGe BiCMOS IHP technology. Noise measurements are simulated to extract the noise figure and gain of the LNA. The extracted parameters are then compared with those autonomously simulated with the CAD. The obtained results show the importance of simulations in defining the theoretical limits of a noise BITE in ideal power measurements conditions. Moreover they present how the model can be successfully used to simulate a noise Built-In Test Equipment block for calibration purposes.