High-Power Heterogeneously Integrated III-V/Silicon Superluminescent Diode

We demonstrate heterogeneously integrated O-band superluminescent diodes (SLDs) emitting 10 mW of continuous-wave output power at a device temperature of up to 65 °C. At 10 mW output power, the SLD has a wall-plug efficiency of 3.1% at 25 °C and 1.3% at 65 °C; a 3-dB optical bandwidth of 20–30 nm; and spectral modulation (ripple amplitude) of 0.13 (1.1 dB) at 25 °C and 0.09 (0.8 dB) at 65 °C. This is the highest reported output power and efficiency for a SLD integrated with silicon by more than one order of magnitude, which opens up new applications for cheaper and more compact SLD-based photonics integrated circuits.