Phase-Change Memory using Cu2GeTe3 and Multiple Writing Technique for Neuromorphic Systems

A phase-change memory (PCM) using Cu
2
GeTe
3
(CGT) and multiple writing technique have been developed for neuromorphic systems. First, the PCM using CGT is fabricated. Next, the single writing technique as a conventional technique is tried, but reproducible operation is required. Therefore, the multiple writing technique for reliable operation is proposed, and it is confirmed that the multiple RESET pulses contribute to it. Finally, the associative memory function by the neuromorphic system is validated.