Assessment of hot carrier stress induced threshold voltage shift in gate-all-around MOSFETs

This paper presents an investigation of hot-carrier stress in GAA MOSFETs under different stress conditions. Stress creates hot electrons at the surface of the devices which results in a leakage pathway in the gate dielectric, resulting in degradation of the device performance. Presenting the deviation of performance from its ideal state, the device under test considered in this work is subjected to several stress durations varying from 0.00001 seconds to 10000 seconds. Depending on stress duration, when the device performance starts deviating drastically, permanent degradation can also be observed. Various figures of merit such as surface potential, total electron density, the lateral and vertical electric field of the channel, recombination of charge carriers, threshold voltage shift, and the temperature associated with hot-carrier injections are analyzed.