Analysis of IR Drop and SSN in CNT and GNR Power Distribution Networks

The work in this paper performed a study of interconnects power integrity (PI) in the of the power distribution network (PDN) in integrated circuits. The IR drop and SSN analysis is executed in CNT-(SWCNT and MWCNT) and GNR interconnects for nanomaterials dimensions. It is noticed that the voltage drop in poweer supply nets in CNT and GNR based interconnects is very less in comparison with that of Copper-based PDN. The impact of power supply voltage drop on timing latency is greatly lesser in carbon nanotube and graphene nanoribbon based power network distribution in comparison to that of Copper-based interconnects for the lengths (1-100)µm. SSN or ground bounce has been one of the important issues in the design of the internal power distribution circuits. Our analysis shows that the performance of carbon nanotube and graphene nanoribbon based power network is better in comparison to that of Copper interconnects.