Doping-Less Underlapped Dielectric Modulating Tunnel FET Biosensor Accomplishing Repulsive Steric Hindrance

Doping-less (DL) underlapped dielectric modulating bio-tunnel field-effect transistor (DU-DM-TFET) is proposed in this manuscript. The impact on ON-current (I
on
), and the consequent sensitivity owing to deviations of dielectric constant (k) and density of charge (N
f
) of biomolecules, nanogap extent (L
cavity
) and nanogap thickness (T
cavity
) at various drain-to-source voltage (V
ds
) have been detailed here. Besides, repulsive steric hindrance issue within the cavity regions has been initiated to minimize the lacuna between theory and practical environment. A detailed simulation has been evaluated by the ATLAS device simulator to validate the workability of the recommended sensor. It has been observed that the recommended biosensor might be a potential contender in favor of label-free biosensing considering repulsive steric hindrance issue.