Modelling of Surface Potential and Threshold Voltage for Short Channel Junctionless Cylindrical Gate-All-Around MOSFET

This work aims for an analytical model of surface potential and threshold voltage for a short channel Junctionless Cylindrical Gate All-Around (JL-CGAA) transistor. Surface potential has been derived from 2-D Poisson’s equation for cylindrical structure with some effective approximations and suitable boundary conditions considering both fixed charges and mobile charges of the device, using Evanescent method. The derived model is valid for all the regions of operations of the device, i.e., from subthreshold to accumulation region. Also, the effects of various physical device parameters such as oxide thickness, channel thickness on the surface potential are studied in this work. Both model and simulation results are in close agreement for different supply voltages.