Analysis of certain electrical properties in Silicon nanowire field-effect transistors with high-κ HfO2 as gate dielectrics

In this study, we proposed that the I-V properties of a SiNW-based Quasi Ballistic MOSFET with high- HfO2 act as gate dielectrics. Here, we discovered a commendable agreement between the produced and TCAD modelled data. The drain current steadily increases in the proposed SiNW MOSFET with high-HfO2 model, albeit at a smaller magnitude as compared to QBD.