Investigation of the Efficiency of CsGeI3-based solar cell using SCAPS-1D modeling and simulation

This paper proposes a fully lead (Pb)-free CsGeI
3
-based Perovskite Solar Cell (PSC) modeled and simulated using Solar cell Capacitance Simulator-1D (SCAPS-1D). With this heterojunction structure, an improved power conversion efficiency (PCE) of about 19.30% has been obtained. PCBM and P3HT are used as electron transfer layer (ETL) and hole transfer layer (HTL) respectively. The effect of change of acceptor density and defect density with the absorber layer thickness has been studied theoretically in this paper. The optimized thickness of the absorber layer is found out to be 1.4 and best values of photovoltaic parameters are obtained for an acceptor density of 5×10
¹⁷
cm
^-3
and defect density of 10
¹⁴
cm
^-3
. The final photovoltaic performance for the solar cell structure of glass/FTO/PCBM/CsGeI
3
/P3HT/Ag are as follow: J
SC
= 25 mA/cm
²
, V
OC
= 1.060 V, PCE = 19.30%, FF = 87.40%.