Investigating Reliability of NIR QD-based Photodiodes Under Bias and Light Stres

Semiconductor Quantum Dots (QDs) have invoked a high interest in the industrial optoelectronic applications due to their high photogeneration ability compared with Silicon materials, in addition to the ease of adjusting them to interact with specific wavelengths by controlling the QD size, whether as a light emitter such as screens or as a light receiver such as imaging applications. We investigate the reliability performance of an optimized (PbS) Quantum Film (QF) based photodiode, and we demonstrate that AC operations drastically improve the reliability performance of QD-based photodiodes.