Electrically Detected Magnetic Resonance Study of High-Field Stressing in SiOC:H Films

We have investigated the initial stages of dielectric breakdown in high-field stressed low-k dielectric (SiOC:H) capacitor structures. Our study makes use of electrically detected magnetic resonance (EDMR) via spin-dependent trap-assisted tunneling (SDTAT). We find at least two distinct stages precede the breakdown of the dielectrics: a very fast initial stage associated with an overall decrease in leakage current and a rapid generation of Si dangling bonds, and a much slower subsequent intermediate stage associated with an overall recovery of leakage current with little further Si dangling bond trap generation. The generation of these Si dangling bonds early-on in the device’s lifetime seems to be associated with the initial decrease in conductance very early in device lifetimes observed in previous electrical studies.