A 1.2V, Radiation Hardened 14T SRAM Memory Cell for Aerospace Applications

In this paper, a 1.2V, radiation-hardened 14T SRAM (RHS-14T) memory cell is proposed to resilience the single event upset (SEU) and dual node upset (DNU) soft errors. The proposed RHS-14T memory cell obtained a 0% failure probability compared to the recently reported radiation-hardened SRAM cells like RSP-14T, RHBD-15T, SAR-14T, SIRI-14T, RH-14T, and SEA-14T with a maximum of 80 fC charge sharing is applied to the sensitive node pairs. The proposed RHS-14T exhibits 2.76x/ 1.43x/ 1.04x/ 1.63x times larger RSNM than RSP-14T/ SAR-14T/ RH-14T/ SEA-14T and 1.18x/ 1.04x/ 1x/ 1.13x/ 1.13x/ 1.21x times larger WSNM than RSP-14T/ RHBD-15T/ SAR-14T/ SIRI-14T/ RH-14T/ SEA-14T. Furthermore, 1.55x/ 1.14x/ 1.12x/ 1.47x/ 1.02x/ 1.54x times larger HSNM than RSP-14T/ RHBD-15T/ SAR-15T/ SIRI-14T/ RH-14T/ SEA-14T. Moreover, 2.06x/ 2.18x/ 1.12x/ 1.01x/ 1.72x/ 1.09x larger effective critical charge than RSP-14T/ RHBD-15T/ SAR-14T/ SIRI-14T/ RH-14T/ SEA14T when supply voltage is at 1V. Results and discussions shows that RHS-14T mitigates a single event upset in all the sensitive nodes. Furthermore, it achieves a better noise margin in terms of write and hold stability in worst-case PVT variations.