Improving Detection Efficiency of Silicon Carbide Neutron Detector Using Double Trench

In this article, we propose a double-trench-type silicon carbide (SiC) neutron detector and model it using the concept of a unit cell on the GEANT4 platform. When the low-level discriminator (LLD) value was fixed at 300 keV, the structural parameters of this double-trench-type SiC neutron detector were optimized to maximize the intrinsic detection efficiency. Compared with the single trench type, the double-trench-type SiC neutron detector can significantly improve the neutron intrinsic detection efficiency within a limited trench depth, which was especially suitable for the current technological status that SiC materials can only be used for shallow trench etching. Apart from optimizing the structural parameters, the energy deposition spectra in the SiC detector region by the generated secondary charged particles upon thermal neutron interaction in neutron conversion materials (
$^{{10}}\text{B}$
and 6LiF) have also been estimated. It can be found that the double-trench-type SiC neutron detector counts significantly increased in the low-energy range, while the counts in the high-energy range are only slightly decreased. This is also the essential reason why the intrinsic detection efficiency of the double-trench-type SiC neutron detector was significantly improved compared to the single-trench-type SiC neutron detector.