A Three-Stage 6W GaN Power Combining Amplifier MMIC Design at Ka-Band

A three-stage 6W Ka-band power amplifier, operating over the bandwidth of 27-31.5 GHz for 5G n257 and n261 wireless communication, is simulated in this paper. Utilizing the 0.15-um gallium nitride (GaN) high electron mobility transistor (HEMT) technology, this PA simulations achieved an output power of more than 38 dBm and a power added efficiency of more than 24% in continuous-wave (CW) operation at a drain supply voltage of 20 V. The OMN is designed carefully with a low pass LC filter and Wilkinson power combiner for high output power and broadband. The chip size is
$4.3^{*}2.5\ mm^{2}$
.