Comparison of V-I characteristics between MOSFET and CNTFET by varying the CNT diameter

The project's goal is to make an unique device's drain characteristics better. By adjusting the CNT's diameter, a CNTFET (carbon nanotube field effect transistor) is created (Carbon Nanotube) A group of 20 samples each of the CNTFET and MOSFET was selected. Using the DFT tool, the source/drain length of a MOSFET and the CNT diameter of a CNTFET were changed to model the drain properties. The device's size can be decreased by shortening the source/drain length. When compared to MOSFET, the CNTFET was determined to be statistically insignificant (P = 0.152), according to the Independent
$T$
test.