A Wideband E-Band Low Noise Amplifier in 0.1 µm GaAs Process

Based on 0.1µm GaAs process, this paper presented an E-band broadband low noise amplifier. The amplifier consists of four stage common-source structure with peak staggering matching. The first two inter-stage matching networks are used for ensure gain on higher frequency while the last two matching networks are used for promote overall bandwidth. Each stage matching network is carefully optimized to achieve better performance for gain, bandwidth and noise figure. Measured gain shows a peak gain of 23.8 dB at 83.5 GHz with a 45% relative bandwidth (from 57-91.5 GHz). The measured results are in good agreement with the simulation results and meet the design requirements. This LNA shows the potential usage in millimeter-wave radar, satellite communication.