Characterization of SU-8 Material Based on Substrate Integrated Waveguide Cavities

The dielectric parameters of the SU-8 3050 material are characterized with substrate integrated waveguide (SIW) cavities. The developed fabrication process is presented for the SIW structures on the 80 µm thick SU-8 layer. The SIW cavities with different sizes are designed and fabricated. The relative permittivity and loss tangent of SU-8 are extracted to be 3.14 and 0.05 in Ka band, respectively, which is validated by the good agreement between the simulated and measured results.