Demonstration of the β-Ga₂O₃ MOS-JFETs With Suppressed Gate Leakage Current and Large Gate Swing

In this work, we have achieved novel lateral enhancement-mode (E-M) and depletion-mode (D-M)
$\beta $
-Ga2O3 metal-oxide-semiconductor junction field-effect- transistors (MOS-JFETs) featuring a low gate leakage current (
$\text{I}_{{\text {G}}}$
) and a large gate swing. Ascribing to the high-quality SiO2 layer above the P-NiO
$_{{{\text {X}}}}$
/N-Ga2O3 heterojunction (HJ), the
$\text{I}_{G}$
was suppressed for over 6 orders of magnitudes when compared with the heterojunction FET (HJ-FET). An off-state drain current of ~
$10^{-{7}}$
mA/mm was also achieved at elevated temperature (T) up to 200 °C, indicating strong thermal stability of our device. The depletion-mode (D-M) MOS-JFET with source-to-drain spacing (
$\text{L}_{{\text {SD}}}$
) of
$12 ~\mu \text{m}$
demonstrates a breakdown voltage (BV) of 1.32 kV and specific on-resistance (
$\text{R}_{{\text {on},\text {sp}}}$
) of 4.4
$\text{m}\Omega \cdot $
cm2, delivering a high Baliga’s power figure of merit (PFOM) of 405 MW/cm2. Due to the potential of
$\beta $
-Ga2O3 MOS-JFET in power electronics, these findings offer a compel ling pathway for future high-power and high-efficiency systems.