First Demonstration of GAA Monolayer-MoS2 Nanosheet nFET with 410μA μ m ID 1V VD at 40nm gate length

This work demonstrates the first successful integration of monolayer MoS
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nanosheet FET in a gate-all-around configuration. At a gate length of 40nm, the transistor exhibits a remarkable $\mathrm{I}_{\mathrm{ON}} \sim 410 \mu \mathrm{A}/ {\mu} \mathrm{m}$ at $\mathrm{V}_{\mathrm{DS}}=1\ \mathrm{V}$, achieved with a monolayer channel, ‘0.7 nm thin. The FET has a large $\mathrm{I}_{\mathrm{ON}}/ \mathrm{I}_{\mathrm{OFF}} \gt 1\mathrm{E}8$, positive $\mathrm{V}_{\mathrm{TH}} \sim 1.4\ \mathrm{V}$ with nearly zero DIBL. Higher drive current can be achieved through stacking of multiple channel layers. We propose here a fully integrated flow and we detail the feasibility of the most critical modules: stack/channel preparation, fin patterning, inner spacer, channel release, contact. The successful demonstration of MoS
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NS with high performance and of the stacked NS modules further clarifies the value proposition in 2D materials for transistor scaling.