First demonstration of full integration and characterization of 4F² 1S1M cells with 45 nm of pitch and 20 nm of MTJ size

It is true that STT-MRAM has been in the spotlight for embedded memory applications, but it has been challenging to enter into high-density memory applications due to area scalability and cost. In this paper, the authors report for the first time the performance of 1 selector-l MTJ (ISIM) cells integrated in 45 nm of pitch and 20nm of MTJ CD on CMOS circuit using As-doped SiO
2
selector. This paper shows the potential of the cross-point MRAM for the application of high-density and low-cost memory.