A c-axis aligned crystalline IGZO FET and a 0.06-μm2 HfO2-based Capacitor 1T1C FeRAM with High Voltage Tolerance and 10-ns Write Time

We fabricated a ferroelectric random access memory (FeRAM) using an oxide semiconductor field-effect transistor (OSFET) and a HfO
2
-based ferroelectric capacitor by utilizing a high breakdown voltage of the OSFET even with a scaled gate length, and examined memory size reduction. Fabricating a bottom electrode by a damascene process eliminated leakage and endurance issues at the capacitor edge. The fabricated FeRAM has a 1T1C configuration including the $0.06- \mu m^{2}$ miniaturized capacitor. This memory has nonvolatility and reliability comparable to those of the memories in the prior arts and achieves high-speed operation and power supply voltage reduction.