Superior Breakdown, Retention, and TDDB Lifetime for Ferroelectric Engineered Charge Trap Gate E-mode GaN MIS-HEMT

A ferroelectric engineered charge trap gate E-mode GaN MIS-HEMT (FEG-HEMT), La-doped $\mathbf{H f}_{0.5} \text{Zr}_{0.5} \mathbf{O}_{2}$ (HZLO) with seed layer (SL), significantly reduced thermal budget $\left(\sim 200^{\circ} \text{C}\right)$, lowered leakage current, and 50% increase in $2P_{\text{r}}$, is implemented for the first time. The high-performance E-mode FEG-HEMT exhibits a positive $V_{\text {th}}$ of 3.7 V while maintaining a I
D
, max of 560 mA/mm, a high off-state breakdown voltage of 917 V, and proved excellent $V_{\text {th}}$ stability with an estimated $V_{\text {th}}$ of 2.9 V after 10 years of retention. High gate breakdown of $V_{\text{GS}}=\mathbf{26.6} \text{V}$ and long time-dependent gate dielectric breakdown (TDDB) (13.38 V at a failure rate of 0.01%) is achieved.