Comprehensive Physics Based TCAD Model for 2D MX2 Channel Transistors

For the first time, a comprehensive TCAD model is developed to unambiguously extract key device parameters: contact resistance (R
c
), channel mobility (μ
CH
), Schottky barrier height (SBH), & D
it
from experimental data on back-gate (BG) transistors with MX
2
channel. The model is tested and validated against three different data sets with different contact metal, quality of channel, contact, and interfaces. Using model's output, we analyze the accuracy of R
c
and μ
CH
extracted by the TLM method and provide guidance on the limits of its applicability. Finally, the model is used to project contact requirements (SBH ~ 0eV, high doping density >2e13cm
^-2
) for performant, scaled transistors with 2D material channel in stacked nanosheet configuration.