First Demonstration of Ultra-low Dit Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation Effect for BEOL-Compatible Non-Volatile Logic Switch

We demonstrate, for the first time, a short-channel (L
G
:40nm) back-end-of-line (BEOL) compatible top-gated (TG) self-aligned FeFETs with the ultra-low interface/bulk trap density (D
it
/D
bulk
) down to 10
¹¹
cm
^-2
eV
^-1
, a 100x improvement over conventional amorphous Indium-Gallium-Zinc-Oxide (IGZO) devices. High memory and drive performance are both achieved, exhibiting a large and stable memory window of 2.1V, excellent endurance exceeding 10
⁷
cycles, close-to-ideal subthreshold swing (S.S.) of 62mV/dec., and the record-low read-after-write delay of 200ns. This is accomplished by utilizing the defect self-compensation effect in the ITO-IGZO heterojunction channels for ferroelectric top-gate stack stabilization. We leverage these advantages and proposed a novel Monolithic 3D (M3D) FPGA architecture with the demonstrated short-channel (L
G
:40nm) BEOL dual-gated (DG) merged memory-logic FeFETs with excellent drive performance as a non-volatile reconfigurable interconnect switch. Our BEOL-compatible DG FeFET switch enables a compact interconnect switch fabrics with a V/2 bias scheme, featuring excellent G
on
/G
off
of 10
⁶
, ultra-low sub-pA leakage, disturb-free, and sneak-current-free read-write operation. This work sets new oxide-semiconductor FeFET performance records useful for future BEOL nonvolatile logic applications.