Design guidelines for SBD integration into SiC-MOSFET breaking Ron A - diode conduction capability trade-off

Schottky barrier diode (SBD) embedded planer gate metal-oxide-semiconductor field effect transistors (MOSFETs) are one of the most promising SiC switching devices owing to their well-established reliability. In this paper, an effective SBD distribution was proposed in order to achieve both low specific on-resistance (RonA) and sufficient diode conduction capability. The proposed checked pattern SBD structure exhibited a superior parasitic body p-n diode clamping effect 2 times better than did the conventional striped SBD pattern. Increased channel density due to small area penalty of embedding the SBD successfully contributed to a low RonA of $2.7 m\Omega$ cm² for a 1.2 kV-class SBD embedded MOSFET while improving diode conduction capability.