Superlattice HfO2-ZrO2 based Ferro-Stack HfZrO2 FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 109 cycles for Multibit NVM

Superlattice (SL) HfO
2
-ZrO
2
with physical thickness of 5 nm and low phase fraction ratio 0.101:1 of monoclinic-phase (m-phase) to orthorhombic-phase (o-phase) investigated by geometrical phase analysis (GPA) is demonstrated. The homogeneous and congruous of SL-HfZrO
2
(HZO) with sufficient ferroelectric-domain is integrated as ferro-stack FeFETs for multibit NVM with low |V
PG/ER
| = 4 V, ultra-low error rate = 7.5×10
^-16
, record high 2-bit endurance for 10
⁹
cycles, and stable data retention > 10
⁴
s. The device-to-device (D2D) variation of nanoscale 3D FeFETs is also improved with the proposed SL-HZO. The superlattice technique for FE-HZO is a promising concept with elevating the coherence of domain access due to high o-phase toward emerging memory applications.