1-Transistor 1-Source/Channel/Drain-Diode (1T1D) One-Time-Programmable Memory in 14-nm FinFET

We present the 1-control-transistor and 1-source/channel/drain-diode(1T1D) one-time-programm- able (OTP) memory cells implemented in 14-nm complementary fin Field-effect-transistors (FinFETs). The OTP cells are fully integrable in the complementary-metal-oxide-semiconductor (CMOS) process without extra litho-masks. The feature size of a unit-cell is 14 F2 (
$0.0502~\mu \text{m}^{{2}}$
), which can be continually shrunk to 3-nm technology. The programming mechanism of the OTP is through the chain-effect induced by the impact-ionization between the channel-drain junction such that the junction structure is destructive, and the diode becomes blown, in terms of an effective open circuit. The pFinFET OTP can be programmed at −2.9 V; 3.1 V for the n-one. Moreover, programmed data can be retained in 200 °C for one month.