A Fully Integrated Heterogenous Si-CMOS/GaN 500 MHz 6 V-to-18 V Boost Converter Chip

This article presents a fully integrated 500 MHz single-switch resonant boost converter using heterogeneous integrated gallium nitride (GaN) and Si-CMOS. Seeking for high level of integration with watt-level power delivering capabilities, the high-speed driver circuitries are implemented in Si-CMOS with customized on-chip inductors, whereas the power switches adopt GaN devices. Two chips are co-designed and integrated using standard flip-chip process. In the proof-of-concept, a 500 MHz single-switch resonant boost dc/dc converter is implemented, fabricated, and measured. The chip occupies an area of 3 mm × 3 mm. It features V
_OUT
/V
_in
of 14–20 V/6 V and P
_OUT
of 3.98–4.2 W with 50–100 Ω loads. The obtained maximal conversion efficiency of 58% and power density of 460 mW/mm
²
are the highest among the similar fully integrated state of the arts.