Gate-Source Voltage Analysis for Switching Crosstalk Evaluation in SiC MOSFETs Half-Bridge Converters

Measuring the gate-source voltages of wide bandgap (WBG) devices in half-bridge converters provides useful information about susceptibility to crosstalk, which can cause uncontrolled cross-conduction and excessive gate-oxide stresses. However, parasitic elements of the printed circuit board (PCB) and device packaging can compromise measurement accuracy, causing unreliable results. Here we describe how this shortcoming can be addressed using devices in packages that have a Kelvin source pin, allowing a more accurate analysis.