A Ka Band Based-on GaAs Asymmeteric Single-Pole Double-Throw Switch

This paper introduces a single-pole, double-throw switch MMIC based on GaAs Pseudomorphic High Electron Transistor (PHEMT) technology for 5G mmWave front-end applications. It is based on an asymmetric structure which maintains high power handling capability, low insertion loss and compact structure in the 35-40GHz operating frequency band. The simulated results of the proposed switch achieves an insertion loss of 0.9/2.0 dB in Tx/Rx operation mode and an isolation of 27dB in Tx mode. When operating in Tx mode, the simulated result of an input 1dB compression point (IP1dB) is 36dBm at 38GHz. The chip area is 0.94mm $\times1.6$ mm.