Analysis of Si₃N₄ based n-FDSOI and p-FDSOI MOSFETS for CMOS Application

In this paper, analysis of a Si
3
N
4
based n-and p-FDSOI MOSFET is presented. The structures of the devices are very similar to the conventional FDSOI MOSFET. Because of this, the fabrication steps of these structures may be accomplished with the use of conventional CMOS process technology. These structures have excellent electrical properties in terms of switching and power dissipation. The results of the simulated structure show a high I
ON
to I
OFF
ratio at low drain voltages. The modeling and simulations of n and p-MOS structures are done using Sentaurus TCAD simulator.