A Comprehensive Optimization Design Method for the Parasitic Impedance of IGCT Driver Board

Integrated gate commutation thyristor (IGCT) is a power assembly that is integrated a gate commutated thyristor (GCT) with its gate driver circuit through PCB. The switching control of the GCT must be achieved by relying on integrated gate driver circuit, and the parasitic impedance in the circuit can seriously affect the switching characteristics of the GCT. Therefore, this paper takes a class of high voltage and high current IGCT driver circuit boards that need to be solved as the research object, analyzes the traditional layout of the driver circuit, proposes a comprehensive optimization strategy considering the gate driver unit and layout, constructs the driver unit by using a hybrid capacitor bank with electrolytic capacitors and ceramic capacitors connected in parallel, and designs the capacitor bank and MOSFET switch group with an equally spaced surround layout to limit the parasitic impedance of the loop to a very low level. Finally, the design of the traditional and proposed IGCT driver boards was completed respectively, and the experimental results showed that the proposed solutions can effectively improve the driving capacity of the IGCT circuit board.