1.2-kV SiC Superjunction Dual-channel MOSFET with Ultra Low Specific on-Resistance | IEEE Conference Publication | IEEE Xplore

1.2-kV SiC Superjunction Dual-channel MOSFET with Ultra Low Specific on-Resistance


Abstract:

In this paper, a novel superjunction dual-channel MOSFETs were proposed, which demonstrated its static and dynamic characteristics compared with dual-channel MOSFET throu...Show More

Abstract:

In this paper, a novel superjunction dual-channel MOSFETs were proposed, which demonstrated its static and dynamic characteristics compared with dual-channel MOSFET through TCAD simulation. Due to the smaller temperature dependency, the superjunction dual-channel MOSFET had superior static performances, especially at high temperature. The Semi-SJ device showed ultra-low Ron,sp of 1.09 mΩ•cm2 at room temperature (RT) and 1.54 mΩ•cm2 at 175 °C. Furthermore, the hot spot away from source contact contributed to the enhanced short-circuit capability.
Date of Conference: 16-19 December 2022
Date Added to IEEE Xplore: 12 January 2023
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ISSN Information:

Conference Location: Chengdu, China

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