Fast-Switching and Low-Loss SOI LIGBT With Recombination Electrode and Double U-Shaped P-Regions

A novel fast-switching low loss silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) is proposed and investigated by simulation. It features a recombination electrode (RE) at anode side and U-shaped P-regions (UP) at the anode and cathode side, respectively (UPRE LIGBT). In a low ON-state anode voltage (
${V}_{\text {A}}$
), the anode side UP (UPa) depletes the N-region under the RE to increase the distributed resistance and thus realize snapback free. Meanwhile, the UPa increases the hole injection area to reduce the ON-state voltage drop (
${V}_{ \mathrm{\scriptscriptstyle ON}}$
). During the turning off, the depletion region between the UPa and N-region shrinks and provides an electron path to the RE, which accelerates electrons to recombine with holes through the RE and thus decreases
${E}_{ \mathrm{\scriptscriptstyle OFF}}$
. Therefore, the UPRE LIGBT performs a superior tradeoff relationship between
${V}_{ \mathrm{\scriptscriptstyle ON}}$
and
${E}_{ \mathrm{\scriptscriptstyle OFF}}$
. Furthermore, the cathode side UP (UPc) provides a low-resistance hole current path to enhance the latch-up immunity. Consequently, at the same
${E}_{ \mathrm{\scriptscriptstyle OFF}}$
,
${V}_{ \mathrm{\scriptscriptstyle ON}}$
of UPRE LIGBT is 27% and 10% lower than that of separated shorted-anode (SSA) and multisegment anode (MSA) LIGBT, respectively. At the same
${V}_{ \mathrm{\scriptscriptstyle ON}}$
, the UPRE LIGBT reduces
${E}_{ \mathrm{\scriptscriptstyle OFF}}$
by 32% compared with the MSA LIGBT. The UPRE LIGBT improves the short-circuit (SC) withstanding time by 33.8% compared with the one without UPc.