Improving the Radioelectronic Device Simulation Quality by Using a Step Recovery Diode

Computer design of radio electronic facilities and systems is currently the main tool for their creation by radio engineers. Diodes are widespread among the electronic component base used in the design. Modern physical layer models of diodes describe their operation with good accuracy, however, equivalent circuits models are used in radio engineering computer-aided design systems. In the vast majority of cases, these are simplified quasi-static models developed in the 70s of the last century. So, the dynamics of the diode operation is observed with a large error, and some aspects of transient processes are not modeled at all. In this paper we consider a refined non-quasi-static model of a diode with the dependence of the lifetime of nonequilibrium charge carriers on the forward current, the mathematical apparatus of which is expressed in the language of equivalent circuits. Therefore, it can be implemented directly by engineers. Using the dependence between the lifetime of nonequilibrium charge carriers and the forward current at a high level of injection in the non-quasistatic diode model, the modeling error of the output voltage of the push-pull pulse sharper does no more than 5%. The standard quasi-static model gives a significantly larger modeling error for both waveform and position. It is shown that the delay between the experimental and model curve is reduced by a factor of half.