Ultra-Low Threshold Voltage OFET Using PANI Nanofibers

Organic field-effect transistors (OFETs) have shown potential market in many low-power sensing applications. Toward that, the fabrication of sharp on/off OFET is essential. Herein, we present an attempt to fabricate OFET using polyaniline (PANI), in the form of PANI-nanofibers with a fiber diameter of 75 nm, as an active semiconductor layer. The polymethyl methacrylate (PMMA) is utilized as a gate dielectric with an aluminum bottom electrode. Top electrodes for both source and drain were fabricated of gold. The Primary, in-situ polymerization method is used in preparing the PANI as a semiconductor film. The morphological and optical properties of PANI nanofibers, as well as PMMA oxide thin-film, were investigated using SEM, FTIR, AFM, and UV-Vis. Spectrometer. The bandgap energy was observed to be 2.2 eV. Consequently, the
I-V
characteristics were studied for the device, showing a sharp sub-threshold response. An ultra-low threshold voltage of 0.17 V was recorded, promoting the fabricated devices for various sensing applications.