Effect of Post Deposition Annealing on Electrical Properties of GaOx/Si structure by Mist Chemical Vapor Deposition Method

We studied the effect of post deposition annealing (PDA) on electrical properties of gallium oxide (GaO
x
) /silicon (Si) structure fabricated by mist chemical vapor deposition (CVD). The effective fixed charge density (Q
eff
) and the interfacial trap density (D
it
) were characterized by a high-low frequency capacitance-Voltage (C-V) technique. The chemical-bonding states of the GaO
x
/Si structures were determined by the XPS spectra. As a result, although the negative Q
eff
was almost constant regardless of the PDA conditions, the D
it
was decreased in H
2
atmosphere. It was considered that the decreased in D
it
is to contribute to the decrease in the dangling bonds on the Si surface form the results of the XPS spectra.