5-GHz band 30 watt power GaAs FETs

C-band high-power and high-efficiency GaAs FETs (field-effect transistors) have been developed. The active region of the FET chip has been highly integrated by forming long gate fingers. Four chips are power-combined efficiently by using internal matching circuits. The FETs deliver an output power at 1-dB gain-compression point of 30 W with 6.8-dB gain and 28% power-added efficiency, and a saturated output power of 33 W at 5.5 GHz. They exhibit an excellent linearity with a third-order intermodulation distortion intercept point of +55 dBm.<>