High power epitaxially-stacked varactor diode multipliers: performance and applications at W-band

Single-diode varactor multipliers capable of providing 260-mW CW (continuous wave) and 850-mW pulsed at 94 GHz are described. Improved performance for the generation of millimeter power at W-band is demonstrated using these single-diode doublers and cascaded multiplier chains for both CW and pulsed operation. Frequency multipliers using epitaxially stacked varactors have given an order-of-magnitude increase in power capability for varactor frequency multiplication; they now provide higher power per device chip than any other millimeter-wave solid-state device.<>