Electrical characterization of copper penetration effects in silicon dioxide

Understanding of electrical and physical copper behavior in dielectric materials is required for efficient analysis of copper contamination reliability issues. This work is based on temperature and bias-temperature stressing of copper-gate MOS capacitors, which allow both capacitance-voltage and leakage current analysis. Electrical results are consistent with SIMS analysis and provide a physical basis for studying interconnect reliability with respect to copper contamination.