Strain Modulated Asymmetrical Si/SiGe Superlattice p+-i-n+ Switches for MMW Low-Loss Secure Communication Systems

In this paper, the prospect of strained Si/Si0.9Ge0.1 super-lattice nano scale vertically doped
$\text{p}^{+}$
-i-
$\text{n}^{+}$
(pin) device/switch array has been reported for ultra-fast switching operation in MM-wave frequency regime. The authors have developed a new simulator based on Quantum Corrected Drift-Diffusion (QMCDD) Carrier transport equations for analyzing the switching properties of strained Si/Si0.9Ge0.1 super-lattice structure based SPST, SPDT and SPMT
$\text{p}^{+}$
-i-
$\text{n}^{+}$
(pin) switches. The enhancements of switching properties are achieved by introducing a small mole fraction of Ge into the Si intrinsic region in the device. The physical and electrical properties of strain induced Si/Si0.9Ge0.1 semiconductor have made this material more attractive for fabrication of high frequency ultra-fast switches in modern communication sectors/industry in a more feasible way. In this research work the out-plane mobility is enhanced by the inclusion of in-plane strain depending on the dimension and the structure of the intrinsic region in the device. The reliability study of the proposed model is also reported in details. According to the authors’ knowledge, this is the first report on Si/Si0.9Ge0.1 super-lattice structure based
$\text{p}^{+}$
-i-
$\text{n}^{+}$
(pin) switches with strain engineering.