Lateral 2D TMDC Memristors – Experiment and Modeling

Memristors are promising devices for future neuromorphic computing applications. Typically, memristors consist of a vertical metal-insulator-metal stack. Recently memristors using layered transition metal dichalcogenides (TMDCs) for the active device region have attracted much attention. In the present paper, we report on the fabrication of lateral WSe
2
and MoS
2
memristors and present measured current-voltage (I-V) characteristics of these devices. Moreover, a model for calculating the I-V characteristics of lateral TMDC memristors is presented. We show that the model can correctly reproduce the experimental I-V characteristics of our devices.