A Rigorous Analysis of Specific ON-resistance for 4H-SiC Superjunction Devices

Wide-bandgap material 4H-SiC has recently been intensively studied for the applications. Due to its high breakdown field, saturation drift velocity and thermal conductivity, it is usually used to produce power devices such as superjunction. In practical design, there are two main factors to be considered which are breakdown voltage and specific on-resistance. However, the rigorous analysis of the specific on-resistance of 4H-SiC superjunction has not been reported. In this paper, an accurately numerical method for calculating the specific on-resistance was proposed. The distribution of electron concentration in n pillar of superjunction was discussed. A discrete method exercised to secure the specific on-resistance was exhibited.