A 38-48 GHz Power Amplifier with 23-dB Gain 18.5-dBm Psat and 28% PAE in 65-nm CMOS

A Q-band power amplifier (PA) with broadband as well as high output power and power-added efficiency (PAE) is presented. The circuit adopts a pseudo-differential push-pull configuration with wideband transformer matching networks and input/output on-chip baluns. The layout topology of large size transistors is proposed and carefully designed for better power performance. The optimization of matching network managed to extend the operating bandwidth significantly. Implemented in a 65-nm bulk CMOS process, the small-signal gain of the PA is 23 dB at 42 GHz with a 3-dB bandwidth of 10 GHz, while the saturated output power (P
sat
) and the maximum PAE are 18.5 dBm and 28%, respectively.